Langdao Silex, established in 2024 by alumni of Tsinghua University's Gas Discharge Plasma Laboratory, showed its low-power FlintNano LPP-OXXO system at the Shanghai fair, without switching it on. The device uses laser-produced plasma (LPP) technology, the same approach used in ASML's modern light sources, generating EUV radiation by firing high-energy laser pulses at tiny heated metal droplets to create extremely hot plasma.
According to the company's published specifications, the system features a 1,000W driving laser operating at 1 kHz to 20 kHz with conversion efficiency exceeding 2 percent. Its EUV output exceeds 15W, with brightness reaching 100 W/(mm²·sr), an étendue of 1 × 10⁻³ mm²·sr and a plasma diameter of 60 μm.
Langdao says the source can run continuously for over 100 hours, with plasma stability of 3% RMS and EUV output power stability of 5%. Those characteristics make it suitable for semiconductor exposure experiments, but its output remains well below what high-volume chip production requires.
The output figure may be measured at the plasma rather than at intermediate focus, as the company has not yet demonstrated a complete EUV collection system, the report notes. Industry publication TrendForce, citing various sources, reported that Langdao will need another three to five years to commercialise the technology.
China cannot procure EUV lithography tools from ASML and must develop such systems locally, making domestic efforts strategically significant. However, as the coverage points out, a light source alone does not make an EUV scanner.