GlobalFoundries returns to advanced nodes with 7nm-class FDX Fusion process for low-power chips

New FD-SOI node targets automotive, edge AI and industrial applications, with production set for 2028 at Dresden fab

By LineZotpaper

Published13 October 2026

Read Time2 min

GlobalFoundries has announced FDX Fusion, a 7nm-class fabrication process based on fully-depleted silicon-on-insulator (FD-SOI) technology, marking the company's return to developing advanced nodes nearly eight years after abandoning its FinFET roadmap. The process is designed for applications prioritising low power consumption and high integration, with production scheduled to begin in 2028 at GlobalFoundries' Dresden facility.

The new node, announced on 12 October 2026, combines innovations in SOI substrates, transistor structures and back-end interconnects to deliver what GlobalFoundries describes as '7nm-class digital performance' and more than twice the transistor density of its 22FDX process introduced around 2015. The company did not disclose specific transistor dimensions, gate pitch, metal pitch or actual density figures.

FDX Fusion supports RF transistors with fT/fmax up to 0.5 THz, analog and mixed-signal circuitry, embedded nonvolatile memory and in-memory computing capabilities. GlobalFoundries said these features enable highly integrated system-on-chip designs that combine digital logic, RF, analog and memory on a single die, reducing the need for multiple chips manufactured on different process technologies.

The company plans to deliver initial demonstration silicon for customer evaluation in early 2027, followed by a first process design kit in mid-2027. GlobalFoundries is already collaborating with several customers on the technology. The company mentioned that BMW, Bosch, Infineon, NXP, Siemens and Tesla have expressed interest, but only Infineon has confirmed collaboration on future 7nm-class technologies for radar and wireless communications.

GlobalFoundries abandoned its leading-edge FinFET development in 2018, cancelling a 7nm FinFET process co-developed with IBM. FDX Fusion represents a return to advanced node development, though using planar transistors and FD-SOI rather than FinFET. The process is aimed at automotive, edge AI, industrial, robotics, sensor and other devices where low power consumption and cost efficiency are more important than maximum performance.

"We are delighted that GlobalFoundries has announced its next-generation 'single-digit FD-SOI' node, building on technology that CEA-Leti has been advancing for decades," said Sébastien Dauvé, chief executive of CEA-Leti. "Through the FAMES pilot line, CEA-Leti continues to shape the future European roadmap for FD-SOI and works every day to promote its adoption in a wide range of applications."

GlobalFoundries intends to provide processor IP based on MIPS, ARC and RISC-V architectures to accelerate product development for FDX Fusion. The company's Dresden facility will be the production site for the new process.

Analysis

Why This Matters

GlobalFoundries' return to advanced node development could offer a power-efficient alternative for automotive and edge AI chips, reducing reliance on leading-edge FinFET processes.
The FDX Fusion node may lower costs and power consumption for integrated SoCs that combine digital, analog and RF functions, potentially speeding up development of connected and autonomous systems.
Customers including BMW, Bosch and Infineon have expressed interest, suggesting the process could serve high-volume industrial and automotive markets.

Background

GlobalFoundries exited the race to develop the smallest chip transistors in 2018, cancelling its 7nm FinFET program. Since then, the company has focused on specialised nodes for mature markets. FDX Fusion revives its participation in advanced nodes but uses fully-depleted silicon-on-insulator (FD-SOI) technology, which offers benefits in low power and RF integration compared to FinFET. The process builds on the company's 22FDX platform introduced around 2015. CEA-Leti, a French research institute, has long advanced FD-SOI technology.

Key Perspectives

GlobalFoundries: FDX Fusion addresses demand for highly integrated, low-power chips by combining digital performance with RF, analog and memory capabilities on one die. The company positions the node as a cost-effective alternative to multi-chip designs. Infineon (confirming collaboration): As a major automotive semiconductor supplier, Infineon sees value in 7nm-class FD-SOI for radar and wireless communications, where power efficiency and integration are critical. Automotive and industrial customers: Companies like BMW, Bosch and Siemens would benefit from a node that can consolidate multiple functions into a single chip, reducing system complexity and power draw in vehicles and factory equipment. Critics: Without disclosed transistor density or performance data, it remains unclear how FDX Fusion compares with competing 7nm-class FinFET processes from TSMC, Samsung and Intel. The 2028 production start also means the node will face established alternatives by the time it reaches volume.

What to Watch

Demonstration silicon availability for customers in early 2027 and subsequent process design kit release in mid-2027.
Which additional customers formally commit to FDX Fusion and announce specific products.
Performance benchmarks and density comparisons relative to existing 7nm-class FinFET nodes once data is published.

Sources

GlobalFoundries unveils 7nm-class FDX Fusion node — comes 7 years after firm abandoned FinFET — Latest from Tom's Hardware