Micron to adopt wafer bonding and High-NA EUV as DRAM approaches atomic limits
Roadmap adds 3D DRAM and vertical memory stacked directly on processors
Micron has dropped 4F² memory cells from its DRAM roadmap and will instead use wafer bonding, High-NA EUV lithography and new materials to keep scaling memory, with its chief technology officer saying at an event this week that the technology is 'nearing atomic limits.'